Stabilization of ZnO polar plane with charged surface nanodefects

被引:31
作者
Lai, Ju Hong [1 ]
Su, Shu Hsuan [1 ]
Chen, Hsin-Hsien [1 ]
Huang, J. C. A. [1 ,2 ]
Wu, Chung-Lin [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 15期
关键词
OXIDE SURFACES; STABILITY; ATOMS;
D O I
10.1103/PhysRevB.82.155406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on in situ scanning probe microscopy/spectroscopy, this study investigates the stabilization of Znterminated ZnO polar plane using surface defects. O-terminated surface defects on a nanometer scale, which have two morphologies, i.e., hexagonal cavities and small pits, are observed at the submonolayer depth on the (0001)-Zn surface by applying medium-energy Ar(+) bombardment (2.5 keV) at a high temperature (850 degrees C). Experimental results indicate that the local electronic structure of O-terminated surface defects exhibits upward band bending with respect to the Zn-terminated surface, which is consistent with the observations made using Kevin probe microscopy, in which the ZnO polar surface has a locally reversed electrostatic field. Moreover, pair-distribution analysis indicates that the O-terminated surface defects with diameters below 0.9 nm are charged with one electron per pit, thus helping to compensate for the internal polarization.
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页数:5
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