High-Performance Carbon Nanotube/InGaZnO Composite Thin Film Transistors and Concentration Effect

In this work, single-walled carbon nanotube/amorphous indium gallium zinc oxide (SWNT/a-IGZO) composite thin film transistors (TFTs) have been realized by a simple sputtering method for the first time. Effect of the embedded single-walled carbon nanotube (SWNT) concentration on the electrical properties of the composite TFTs has also been investigated. The composite TFTs show better electrical performance compared with those without SWNT. The TFTs with SWNT concentration of 0.025 mg/mL show the best performance among all the samples. The field-effect mobility is improved by more than twice by embedding SWNTs. The on-current reaches 0.54 mu A/mu m under a drain voltage of 20 V, and I-on/I-off ratio reaches about 8x10(5). Lower threshold voltage has also been obtained. Besides, the proposed fabrication process is mainly sputter-based so that it is more stable to achieve the device uniformity and more compatible with the existing mass-production process for display panel, which pushes SWNT/a-IGZO composite TFTs one more step closer to the practical applications.