Simultaneous orientation and thickness mapping in transmission electron microscopy

被引：5

作者：

Tyutyunnikov, Dmitry ^{[1
]}

Oezdoel, V. Burak ^{[2
]}

Koch, Christoph T. ^{[1
]}

机构：

[1] Univ Ulm, Inst Expt Phys, D-89081 Ulm, Germany

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

来源：

ULTRAMICROSCOPY | 2015年 / 150卷

关键词：

Orientation and thickness mapping; Transmission electron microscopy; SPECIMEN-THICKNESS; STRAIN;

D O I：

10.1016/j.ultramic.2014.11.034

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 rim technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available. (C) 2014 The Authors. Published by Elsevier B.V.

引用

页码：37 / 43

页数：7

共 32 条

[1] Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography [J].