Impact of Surfaces on Photoinduced Halide Segregation in Mixed-Halide Perovskites

被引：243

作者：

Belisle, Rebecca A. ^{[1
,2
]}

Bush, Kevin A. ^{[2
]}

Bertoluzzi, Luca ^{[2
]}

Gold-Parker, Aryeh ^{[3
,4
]}

Toney, Michael F. ^{[4
]}

McGehee, Michael D. ^{[5
]}

机构：

[1] Wellesley Coll, Phys Dept, Wellesley, MA 02481 USA

[2] Stanford Univ, Mat Sci & Engn Dept, Stanford, CA 94305 USA

[3] Stanford Univ, Chem Dept, Stanford, CA 94305 USA

[4] Stanford Synchrotron Radiat Lightsource, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[5] Univ Colorado, Chem & Biol Engn, Boulder, CO 80309 USA

来源：

ACS ENERGY LETTERS | 2018年 / 3卷 / 11期

基金：

美国国家科学基金会; 瑞士国家科学基金会;

关键词：

INDUCED PHASE SEGREGATION; OPEN-CIRCUIT VOLTAGE; TANDEM SOLAR-CELLS; IODIDE; FILMS; PASSIVATION; EFFICIENT; RECOMBINATION; DEFECTS; YIELDS;

D O I：

10.1021/acsenergylett.8b01562

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoinduced halide segregation currently limits the perovskite chemistries available for use in high-bandgap semiconductors needed for tandem solar cells. Here, we study the impact of post-deposition surface modifications on photoinduced halide segregation in methylammonium lead mixed-halide perovskites. By coating a perovskite surface with the electron-donating ligand trioctylphosphine oxide (TOPO), we are able to both reduce nonradiative recombination and dramatically slow the onset of halide segregation in CH3NH3PbI2Br films. This result, coupled with the observation that the rate of halide segregation can be tuned by varying the selective contact, provides a direct link between surface modifications and photoinduced trap formation. On the basis of these observations, we discuss possible mechanisms for photoinduced halide segregation supported by drift-diffusion simulations. This work suggests that improved understanding and control of perovskite surfaces provides a pathway toward stable and high-performance wide-bandgap perovskites for the next generation of tandem solar cells.

引用

页码：2694 / 2700

页数：13

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