Ultraviolet laser diodes on sapphire and AlN substrates

被引：2

作者：

Kneissl, Michael ^{[1
,2
]}

Yang, Zhihong ^{[2
]}

Teepe, Mark ^{[2
]}

Johnson, Noble M. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[2] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS VIII | 2009年 / 7230卷

关键词：

Ultraviolet; UV; InAlGaN; AlN; sapphire; quantum well; LED; laser diode; laser;

D O I：

10.1117/12.810926

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm(2) for lasers emitting near 330 nm.

引用

页数：7

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