A 512x8 electrical fuse memory with 15 μm2 cells using 8-sq asymmetric fuse and core devices in 90nm CMOS

被引：4

作者：

Chung, Shine. ^{[1
]}

Huang, Jiann-Tseng ^{[1
]}

Chen, Paul ^{[1
]}

Hsueh, Fu-Lung ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Corp Ltd, Hsinchu 30077, Taiwan

来源：

2007 Symposium on VLSI Circuits, Digest of Technical Papers | 2007年

关键词：

D O I：

10.1109/VLSIC.2007.4342771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 15 mu m(2) cell 4Kb electrical fuse memory is designed in 90nm CMOS using core devices only. The N+ 8-sq asymmetric fuses are used to enhance fuse uniformity, reliability and aggregate electro-migration. High-gain cascade amplifiers sense small resistance differences to achieve a 2.25V program voltage in 1 mu s. A sufficient design window is derived and verified by using on-chip resistance monitor without area overheads.

引用

页码：74 / 75

页数：2