PVD HfO2 for high-precision MIM capacitor applications

被引：58

作者：

Kim, SJ ^{[1
]}

Cho, BJ

Li, MF

Yu, XF

Zhu, CX

Chin, A

Kwong, DL

机构：

[1] Natl Univ Singapore, Silicone Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期

关键词：

capacitance density; HfO2; metal-insulator-metal (MIM) capacitor; sputter; voltage coefficient of capacitor (VCC);

D O I：

10.1109/LED.2003.813381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.

引用

页码：387 / 389

页数：3

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