PVD HfO2 for high-precision MIM capacitor applications

被引：58
作者：
Kim, SJ [1 ]
Cho, BJ
Li, MF
Yu, XF
Zhu, CX
Chin, A
Kwong, DL
机构：
[1] Natl Univ Singapore, Silicone Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期
关键词：
capacitance density; HfO2; metal-insulator-metal (MIM) capacitor; sputter; voltage coefficient of capacitor (VCC);
D O I：
10.1109/LED.2003.813381
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
引用
收藏
页码：387 / 389
页数：3
相关论文
共 14 条
[1]  
ARAMCOST M, 2000, IEDM, P157
[2]   Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].
Babcock, JA ;
Balster, SG ;
Pinto, A ;
Dirnecker, C ;
Steinmann, P ;
Jumpertz, R ;
El-Kareh, B .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232
[3]   High-density MIM capacitors using Al2O3 and AlTiOx dielectrics [J].
Chen, SB ;
Lai, CH ;
Chin, A ;
Hsieh, JC ;
Liu, J .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) :185-187
[4]   A study of MIMIM on-chip capacitor using Cu/SiO2 interconnect technology [J].
Chen, Z ;
Guo, LH ;
Yu, MB ;
Zhang, Y .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (07) :246-248
[5]   A high performance MIM capacitor using HfO2 dielectrics [J].
Hu, H ;
Zhu, CX ;
Lu, YF ;
Li, MF ;
Cho, BJ ;
Choi, WK .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :514-516
[6]   MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics [J].
Hu, H ;
Zhu, CX ;
Yu, XF ;
Chin, A ;
Li, MF ;
Cho, BJ ;
Kwong, DL ;
Foo, PD ;
Yu, MB ;
Liu, XY ;
Winkler, J .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) :60-62
[7]   DC and RF characteristics of advanced MIM capacitors for MMIC's using ultra-thin remote-PECVD Si3N4 dielectric layers [J].
Lee, JH ;
Kim, DH ;
Park, YS ;
Sohn, MK ;
Seo, KS .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1999, 9 (09) :345-347
[8]   A full Cu damascene metallization process for sub-0.18μm RF CMOS SoC high Q inductor and MIM capacitor application at 2.4GHz and 5.3GHz [J].
Lin, CC ;
Hsu, HM ;
Chen, YH ;
Shih, T ;
Jang, SM ;
Yu, CH ;
Liang, MS .
PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :113-115
[9]   Effect of the nitrous oxide plasma treatment on the MIM capacitor [J].
Ng, CH ;
Chu, SF .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :529-531
[10]  
Semiconductor Industry Association, 2001, INT TECHN ROADM SEM
12