Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields

被引：192

作者：

Taychatanapat, Thiti ^{[1
]}

Jarillo-Herrero, Pablo ^{[2
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 16期

基金：

美国国家科学基金会;

关键词：

IMPURITY CONDUCTION; BANDGAP;

D O I：

10.1103/PhysRevLett.105.166601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.

引用

页数：4

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