Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

被引：8

作者：

Kosugi, R

Fukuda, K

Arai, K

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Ultra Low Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1598621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method of oxidation by atomic oxygen has been developed for gate oxide formation in SiC metal-oxide-semiconductor (MOS) devices. Ozone (O-3)-admixed oxygen (O-2) gas is introduced into the cold-wall oxidation furnace, where atomic oxygen in a ground state is formed by thermal decomposition of O-3 molecules at elevated sample temperatures. The growth rate of oxide in the O-3-admixed gas shows a maximum at around 666.4 Pa and 950-1200 degreesC, whereas the rate in pure O-2 gas is negligible below 6664.5 Pa. Interface trap density (D-it) of the MOS capacitors fabricated using atomic oxygen strongly depends on the oxidization temperature; oxidation at 1200 degreesC results in significant reduction of D-it in comparison with that at 950 degreesC. (C) 2003 American Institute of Physics.

引用

页码：884 / 886

页数：3

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