Reactions of atomic oxygen with the D-covered Si(100) surfaces

被引：0
作者：
Khanom, F. [1 ]
Khan, A. R. [1 ]
Rahman, F. [1 ]
Takeo, A. [1 ]
Goto, H. [1 ]
Namiki, A. [1 ]
机构：
[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 14期
关键词：
silicon surface; deuterium adsorption; oxygen; abstraction; water formation;
D O I：
10.1016/j.susc.2007.04.256
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied D abstraction by O on the D/Si(1 0 0) surfaces using a continuous as well as pulsed O-beams. Both D-2 and D2O molecules are detected during O-exposure. The D-2 desorption is found to take place more efficiently on the monodeute ride/dideuteride surface than on the monodeuteride surface. The pulsed beam experiments exhibit occurrence of both a slow and a fast D-2 desorption. The D2O desorption is found to obey the second-order rate law in theta(0)(D) on the monodeuteride surfaces and 3.5th-order rate law on the monodeuteride/dideuteride surfaces. The D2O desorption is found to be governed also by the second-order rate law, however regardless of D coverage even on the monodeuteride/dideuteride surfaces. Possible mechanisms for the O-induced desorption from the D/Si(1 0 0) surfaces are discussed. (C) 2007 Elsevier B.V. All rights reserved.
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收藏
页码：2924 / 2930
页数：7
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