Snapback behavior of the postbreakdown I-V characteristics in ultrathin SiO2 films

被引:24
作者
Chen, TP [1 ]
Tse, MS
Zeng, X
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
关键词
D O I
10.1063/1.1342214
中图分类号
O59 [应用物理学];
学科分类号
摘要
With the I-V measurement technique that forced a current to an ultrathin gate oxide and measured the voltage drop, a snapback phenomenon, i.e., the gate oxide was switched from a higher-impedance state to a lower-impedance state suddenly, was observed during the postbreakdown I-V measurement. The snapback could be triggered at a very low measurement current. Single or multiple snapbacks have been observed, and it was found that the occurrence of snapback was a random event. The snapback is explained in terms of the formation of an additional percolation path due to the neutralization of negatively charged traps or the generation of neutral electron traps at certain strategic positions during the measurement. (C) 2001 American Institute of Physics.
引用
收藏
页码:492 / 494
页数:3
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