2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer

被引：27
作者：
Bian, Zhengliang [1 ]
Zeng, Ke [1 ]
Chowdhury, Srabanti [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 04期
关键词：
GaN; PN diode; hydrogen passivated layer; field plate; spin-on-glass; avalanche breakdown; N DIODE; TERMINATION; FABRICATION; DESIGN;
D O I：
10.1109/LED.2022.3149748
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel edge termination method resulting in an avalanche-capable 2.8 kV vertical gallium nitride (GaN) pn diode is reported. A low transition temperature spinon-glass (SOG) based field plate (FP) was deposited on top of the hydrogen-plasma passivated p GaN layer to achieve better electric field management. The hydrogen plasma treatment along with the field plate offered an edge termination without mesa etch that was able to mitigate the peak electric fields in the diodes. Avalanche was confirmed by the positive temperature coefficient of the breakdown voltage. Without the field plate, the breakdown voltage was recorded between 1.3 to 2.1 kV, without an avalanche behavior. The fabricated diodes exhibited a good rectifying behavior with an on-off ratio of 10(9) and a specific resistance of 1.65 m Omega.cm(2). This work demonstrated the avalanche capability with the combination of FP and hydrogen-plasma based termination in GaN vertical pn diodes, showing a high figure-of-merit of 4.8 GW/cm(2).
引用
收藏
页码：596 / 599
页数：4
相关论文
共 21 条
[1]  
Fu H., IEEE ELECTR DEVICE L, V41, P127
[2]  
Fu H., Appl. Phys. Exp., V12
[3]   High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination [J].
Fu, Houqiang ;
Fu, Kai ;
Huang, Xuanqi ;
Chen, Hong ;
Baranowski, Izak ;
Yang, Tsung-Han ;
Montes, Jossue ;
Zhao, Yuji .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) :1018-1021
[4]   Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown [J].
Fukushima, Hayata ;
Usami, Shigeyoshi ;
Ogura, Masaya ;
Ando, Yuto ;
Tanaka, Atsushi ;
Deki, Manato ;
Kushimoto, Maki ;
Nitta, Shugo ;
Honda, Yoshio ;
Amano, Hiroshi .
APPLIED PHYSICS EXPRESS, 2019, 12 (02)
[5]   Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT [J].
Hao, Ronghui ;
Xu, Ning ;
Yu, Guohao ;
Song, Liang ;
Chen, Fu ;
Zhao, Jie ;
Deng, Xuguang ;
Li, Xiang ;
Cheng, Kai ;
Fu, Kai ;
Cai, Yong ;
Zhang, Xinping ;
Zhang, Baoshun .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (04) :1314-1320
[6]   Robust avalanche in GaN leading to record performance in avalanche photodiode [J].
Ji, Dong ;
Ercan, Burcu ;
Benson, Garret ;
Newaz, A. K. M. ;
Chowdhury, Srabanti .
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
[7]   60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K [J].
Ji, Dong ;
Ercan, Burcu ;
Benson, Garrett ;
Newaz, A. K. M. ;
Chowdhury, Srabanti .
APPLIED PHYSICS LETTERS, 2020, 116 (21)
[8]   Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm2/1500 V GaN Diodes [J].
Ji, Dong ;
Li, Siwei ;
Ercan, Burcu ;
Ren, Chenhao ;
Chowdhury, Srabanti .
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (02) :264-267
[9]   Development of High-Voltage Vertical GaN PN Diodes [J].
Kaplar, R. J. ;
Gunning, B. P. ;
Allerman, A. A. ;
Crawford, M. H. ;
Flicker, J. D. ;
Armstrong, A. M. ;
Yates, L. ;
Binder, A. T. ;
Dickerson, J. R. ;
Pickrell, G. ;
Sharps, P. ;
Anderson, T. ;
Gallagher, J. ;
Jacobs, A. ;
Koehler, A. ;
Tadjer, M. ;
Hobart, K. ;
Ebrish, M. ;
Porter, M. ;
Martinez, R. ;
Zeng, K. ;
Ji, D. ;
Chowdhury, S. ;
Aktas, O. ;
Cooper, J. .
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
[10]   High Voltage Vertical GaN p-n Diodes With Avalanche Capability [J].
Kizilyalli, Isik C. ;
Edwards, Andrew P. ;
Nie, Hui ;
Disney, Don ;
Bour, Dave .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3067-3070
123