Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics

被引：26

作者：

Saran, M ^{[1
]}

Cox, R ^{[1
]}

Martin, C ^{[1
]}

Ryan, G ^{[1
]}

Kudoh, T ^{[1
]}

Kanasugi, M ^{[1
]}

Hortaleza, J ^{[1
]}

Ibnabdeljalil, M ^{[1
]}

Murtuza, M ^{[1
]}

Capistrano, D ^{[1
]}

Roderos, R ^{[1
]}

Macaraeg, R ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new bond failure mechanism related to the new, mechanically weak, low-k dielectrics in the intermetal dielectric stacks is presented. Mechanical reinforcement of the dielectric stack through the use of metal grids is demonstrated to be effective to prevent this damage. Possible failure mechanisms are discussed.

引用

页码：225 / 231

页数：7