Bidirectional Switching Characteristics Analysis Based on SiC MOSFET

被引：0

作者：

Song, Weizhang ^{[1
]}

Zhang, Weijie ^{[1
]}

Ren, Biying ^{[1
]}

Zhong, Yanru ^{[1
]}

机构：

[1] Xian Univ Technol, Xian, Shaanxi, Peoples R China

来源：

2018 CHINESE AUTOMATION CONGRESS (CAC) | 2018年

基金：

中国国家自然科学基金;

关键词：

SiC MOSFET; Bidirectional Switche; Characteristic analysis;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Compared with Si MOSFET, the SiC MOSFET has the advantages of high temperature resistance, high voltage. high switching frequency and low switching loss. Bidirectional switches are widely used in matrix converters, T-type three-level and VIENNA rectifiers,however,the bidirectional switching characteristics based on SiC MOSFET are still less discussed In order to explore the bidirectional switching characteristic of SiC MOSFET. the equivalent circuit of SiC MOSFET is first established and a static model including trans-conductance, threshold voltage and pin resistance, and a dynamic model including junction capacitance and body diode are constructed The forward and reverse conduction and turn-off characteristics of the SiC MOSFET bidirectional switch are deduced and analyzed The reason for bidirectional switching oscillation and voltage spike are discussed in combination with the experiment The characteristic law of SiC MOSFET and its bidirectional switch are verified through using simulation and experimental results.

引用

页码：2949 / 2954

页数：6

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