Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction

被引：9

作者：

Fang, Fang ^{[1
,2
]}

Zhao, Dongxu ^{[3
]}

Fang, Xuan ^{[2
]}

Li, Jinhua ^{[2
]}

Wei, Zhipeng

Wang, Shaozhuan

Wu, Jilong

Shen, Dezhen ^{[3
]}

Wang, Xiaohua

机构：

[1] Changchun Univ Sci & Technol, Dept Phys, Changchun 130022, Peoples R China

[2] Int Joint Res Ctr Nanophoton & Biophoton, Changchun 130022, Peoples R China

[3] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2012年 / 73卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Thin films; Epitaxial growth; Optical properties; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; ZNO; PHOTOLUMINESCENCE; LUMINESCENCE; EMISSION; FILMS; CDO; SI;

D O I：

10.1016/j.jpcs.2011.10.041

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By cadmium allowing of zinc oxide, a phosphor-free single-chip white light emission diode based on n-ZnCdO/p-GaN heterostructure has been realized. The white light electroluminescence was produced by the superposition of two intense emission bands, a blue band and a yellow band. The origins of the blue band was contributed by both GaN and ZnCdO, while the yellow band was from the recombination of the holes and the electrons in the interface of GaN and ZnCdO. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：217 / 220

页数：4

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