Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices

被引:30
作者
Gong, Cheng [1 ,2 ]
Yang, Hong Bin [1 ]
Song, Qun Liang [1 ,2 ]
Li, Chang Ming [1 ,2 ]
机构
[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Ctr Adv Bionanosyst, Singapore 637457, Singapore
[2] Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China
关键词
Nanostructure; Polymer solar cell; V2O5; nanobelt; TRANSITION-METAL OXIDES; PHOTOVOLTAIC CELLS; SOLAR-CELLS; MORPHOLOGY; NETWORK; BLENDS; FILMS;
D O I
10.1016/j.orgel.2011.10.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:7 / 12
页数:6
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