Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

被引：0

作者：

Tsutsui, Kazuo ^{[1
]}

Kobayashi, Yusuke ^{[1
]}

Kakushima, Kuniyuki ^{[1
]}

Ahmet, Parhat ^{[2
]}

Rao, V. Ramgopal ^{[3
]}

Iwai, Hiroshi ^{[2
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, J2-69,4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[3] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS | 2011年 / 470卷

基金：

日本学术振兴会;

关键词：

variability; threshold voltage; sensitivity; short channel effect; FinFET; double gate; SIMULATION;

D O I：

10.4028/www.scientific.net/KEM.470.194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To conduct analyses of variability of threshold voltage (V-th) in FinFETs whose structures are based on the ITRS, sensitivity coefficients of variations of V-th caused by the fluctuation of principal device parameters were derived by device simulation. The sensitivity coefficient correlated with each device parameter was separated into two factors: one due to an intrinsic mechanism (1D factor) and another due to short-channel effects (2D factor). The 1D and 2D factors were found to cancel each other out in some cases, thereby reducing the sensitivity coefficient. Based on these results, FinFETs with various structures were examined and controlling short-channel effects was demonstrated to be an effective way to reduce the variation in the threshold voltage.

引用

页码：194 / +

页数：2

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