Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability

被引:8
作者
Hayashi, Shin-Ichiro [1 ]
Wada, Keiji [1 ]
机构
[1] Tokyo Metropolitan Univ, 1-1 Minami Osawa, Hachioji, Tokyo 1920397, Japan
关键词
continuous switching test; long-term reliability; SiC MOSFET;
D O I
10.1541/ieejjia.21004267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study presents a design method for the continuous switching test circuits of power devices. Depending on the relationship between the rated voltage of a DC voltage source and device under test (DUT), two types of test circuits are proposed. These test circuits comprise a cascaded buck-boost (or boost-buck) converter to achieve power regeneration. Based on analysis of the test circuits, a design method is proposed to ensure that any failure does not spread to the test circuit even when the DUT fails during the continuous switching tests. A test circuit is designed according to the proposed method, and its experimental results demonstrate the validity of the proposed design.
引用
收藏
页码:108 / 116
页数:9
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