Leakage current mechanism in sub-micron polysilicon thin-film transistors

被引：117

作者：

Olasupo, KR

Hatalis, MK

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] LEHIGH UNIV,DEPT ELECT ENGN & COMP SCI,BETHLEHEM,PA 18105

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 08期

关键词：

D O I：

10.1109/16.506772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) while thermionic field emission dominate at moderately high drain bias. At high drain bias (>-5.0 V), tunneling was observed to be the dominant leakage mechanism.

引用

页码：1218 / 1223

页数：6

共 7 条

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