Radiation damage microstructures in silicon and application in position sensitive charged particle detection

被引：11

作者：

Jaksic, M ^{[1
]}

Medunic, Z ^{[1
]}

Bogovac, M ^{[1
]}

Skukan, N ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10002, Croatia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 231卷

关键词：

radiation damage; silicon detectors; IBIC; position sensitive detectors;

D O I：

10.1016/j.nimb.2005.01.107

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Area selective irradiation using MeV ions having different ranges has been performed in a nuclear microprobe to produce radiation damage microstructures in silicon photodiodes. IBIC (Ion Beam Induced Charge) technique has been used for on line monitoring of radiation damage produced by different fluences of He, Li and O ions of MeV energies. Three-dimensional patterning of radiation damage structures may be used for different applications. By creating a region of constant damage gradient in Si photodiode, position sensitive radiation detection has been demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：502 / 506

页数：5

相关论文

共 8 条

[1] Simulation of non-ionising energy loss and defect formation in silicon [J].

Huhtinen, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 491 (1-2) :194-215

[2] New developments in IBIC for the study of charge transport properties of radiation detector materials [J].

Jaksic, M ;

Pastuovic, Z ;

Tadic, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 158 (1-4) :458-463

[3] A comparative study of the radiation hardness of silicon carbide using light ions [J].

Lee, KK ;

Ohshima, T ;

Saint, A ;

Kamiya, T ;

Jamieson, DN ;

Itoh, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 210 :489-494

[4] Radiation damage in silicon detectors [J].

Lindström, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2) :30-43

[5] Position-sensitive detectors based on carrier drift using a CdTe semiconductor [J].

Nishizawa, H ;

Nishiura, R ;

Takashima, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 521 (2-3) :416-422

[6] Displacement damage degradation of ion-induced charge in Si pin photodiode [J].

Onoda, S ;

Hirao, T ;

Laird, JS ;

Mori, H ;

Itoh, H ;

Wakasa, T ;

Okamoto, T ;

Koizumi, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 :444-447

[7] Measurements of charge collection profiles in virgin and strongly irradiated silicon diodes by means of the micro-IBICC technique [J].

Vittone, E ;

Manfredotti, C ;

Fizzotti, F ;

Lo Giudice, A ;

Lorenzi, A ;

Galassini, S ;

Jaksic, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 476 (03) :607-613

[8] A novel silicon detector for energetic electrons with improved linearity characteristics [J].

von Borany, J ;

Beyer, D ;

Beyer, V ;

Schmidt, B ;

Schnabel, B .

MICROELECTRONIC ENGINEERING, 2003, 67-8 :140-148