Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field

被引：0
作者：
Zeitler, U
Schumacher, HW
Haug, RJ
Jansen, AGM
机构：
[1] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] MPIF, CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble 09, France
来源：
PHYSICA B | 2001年 / 298卷 / 1-4期
关键词：
quantum Hall effect; coincidence experiments; silicon-germanium heterostructure; stripe phases;
D O I：
10.1016/S0921-4526(01)00371-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have observed strong transport anisotropies in magneto-transport experiments in the two-dimensional electron system of a SiGe heterostructure. These effects occur in tilted magnetic fields where two neighboring Landau levels with opposite spin are close to half filling. We propose that the observed anisotropies may be due to the formation of a unidirectional stripe phase formed by two energetically coinciding Landau levels. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：501 / 504
页数：4
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