Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material

被引：32

作者：

Oh, Himchan ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Yang, Shinhyuk ^{[1
]}

Ryu, Min Ki ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 02期

关键词：

INSTABILITY; ZNO;

D O I：

10.1063/1.3610476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel strategy to enhance the bias and illumination stress stability of oxide thin-film transistors (TFTs) is presented. The ultrathin positive charge barrier is employed to block the movement of photo-generated charges toward the interface between gate insulator and semiconductor under negative gate bias and illumination. This method can break through the limitation in stability enhancement caused by the inevitable oxygen vacancy and facilitates the fabrication of highly stable oxide TFTs at low process temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610476]

引用

页数：3

共 21 条

[1]

Ito M., 2006, P INT DISPL WORKSH, P663

[2] Oxygen vacancies in ZnO [J].

Janotti, A ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[3] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[4] Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors [J].

Ji, Kwang Hwan ;

Kim, Ji-In ;

Jung, Hong Yoon ;

Park, Se Yeob ;

Choi, Rino ;

Kim, Un Ki ;

Hwang, Cheol Seong ;

Lee, Daeseok ;

Hwang, Hyungsang ;

Jeong, Jae Kyeong .

APPLIED PHYSICS LETTERS, 2011, 98 (10)

[5] Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics [J].

Ji, Kwang Hwan ;

Kim, Ji-In ;

Mo, Yeon-Gon ;

Jeong, Jong Han ;

Yang, Shinhyuk ;

Hwang, Chi-Sun ;

Park, Sang-Hee Ko ;

Ryu, Myung-Kwan ;

Lee, Sang-Yoon ;

Jeong, Jae Kyeong .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1404-1406

[6] Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05) :860-867

[7]

Kim H. D., 2009, INT M INF DISPL, P35

[8] Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer [J].

Kim, Jeong Hwan ;

Kim, Un Ki ;

Chung, Yoon Jang ;

Hwang, Cheol Seong .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (5-6) :178-180

[9]

KOPARK SH, 2009, TELECOMMUN ERS I J, V31, P653

[10] The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors [J].

Lee, Kwang-Hee ;

Jung, Ji Sim ;

Son, Kyoung Seok ;

Park, Joon Seok ;

Kim, Tae Sang ;

Choi, Rino ;

Jeong, Jae Kyeong ;

Kwon, Jang-Yeon ;

Koo, Bonwon ;

Lee, Sangyun .

APPLIED PHYSICS LETTERS, 2009, 95 (23)

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