Synchrotron X-ray diffraction study of ZnTe at high pressure

被引：14

作者：

Onodera, A. ^{[1
]}

Ohtani, A. ^{[1
]}

Tsuduki, S. ^{[1
]}

Shimomura, O. ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[2] Japan Atom Energy Res Inst, SPring 8, Sayo, Hyogo 6795148, Japan

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 7-8期

关键词：

semiconductors; X-ray scattering; crystal binding and equation of state; phase transitions;

D O I：

10.1016/j.ssc.2007.11.020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnTe has been studied at high pressure to 76 GPa and at room temperature in a diamond-anvil cell using angle-dispersive X-ray diffraction 4 technique with synchrotron radiation and an imaging plate detector. The equation-of-state parameters of the two high-pressure phases of ZnTe were for the first time derived to be B-0 = 91.3(7.0) GPa and B'(0) = 0.8(1.0) for the cinnabar-type phase and B0 = 134(5) GPa and B'(0) = 2.4(1) for the Cmcm-type phase, respectively. (C) 2007 Elsevier Ltd. All rights reserved.

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收藏

页码：374 / 378

页数：5

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