Low-power consumption ternary full adder based on CNTFET

被引:16
作者
Jafarzadehpour, Fereshteh [1 ]
Keshavarzian, Peiman [1 ]
机构
[1] Islamic Azad Univ, Kerman Branch, Dept Comp Engn, Kerman, Iran
关键词
carbon nanotube field effect transistors; low-power electronics; adders; field effect transistor circuits; voltage control; circuit complexity; low-power consumption ternary full adder; carbon nanotube field-effect transistors; TFA; threshold voltage simple control; ternary logic circuits; low-power consumption; low-power delay product; PDP; noise margins; ternary half sum generators; THSGs; sum-generation unit; carry-generation unit; HSPICE; CNTFET technology; low circuit complexity; size; 32; nm; MULTIPLE-VALUED LOGIC; DESIGN; CMOS;
D O I
10.1049/iet-cds.2015.0264
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents low-power circuits to implement ternary full adder (TFA) using carbon nanotube field-effect transistors (CNTFETs). Besides the unique characteristics of the CNTs, the threshold voltage simple control is the best property to implement ternary logic circuits. Low-complexity, low-power consumption and low-power delay product (PDP) are the benefits of the proposed circuits in comparison with all previous presented designs of TFA. The final proposed TFA is robust and has proper noise margins. The structure of the final proposed TFA is more appropriate to use in ripple adders, since the first ternary half sum generators (THSGs) in all cells produce their outputs in parallel (in the final proposed TFA, the output of the first THSG of the sum-generation unit is also used in the carry-generation unit). The proposed circuits are simulated using HSPICE with 32 nm-CNTFET technology. According to simulation results, the final proposed TFA has reduced the power consumption significantly and results in 86.92 and 97% reductions in terms of the PDP in comparison with two recent proposed designs.
引用
收藏
页码:365 / 374
页数:10
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