Pressure-induced semimetal-to-semiconductor transition in bismuth

被引：7

作者：

Brown, Philip ^{[1
]}

Semeniuk, Konstantin ^{[1
]}

Vasiljkovic, Aleksandar ^{[1
]}

Grosche, F. Malte ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge, England

来源：

20TH INTERNATIONAL CONFERENCE ON MAGNETISM, ICM 2015 | 2015年 / 75卷

基金：

英国工程与自然科学研究理事会;

关键词：

Bismuth; pressure; semimetal-semiconductor transition; DEPENDENCE;

D O I：

10.1016/j.phpro.2015.12.005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semimetallic bismuth possesses an unusual electronic structure and an extremely small Fermi surface, which it is predicted can be suppressed to zero size by the application of hydrostatic pressure. We report evidence for a such a semimetal-to-semiconductor transition in single crystal bismuth as measured by transport measurements under pressure, finding that the low-temperature conductivity (a measure of the carrier density) tends to zero at a pressure of around 25 kbar. We further describe a simple modulation technique for measuring quantum oscillations in low fields without compromising the ability to measure conventional resistivity, applicable to piston cylinder cells.

引用

页码：29 / 33

页数：5

共 9 条

[1] Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition [J].