Observation of 1.55 μm light emission from InAs quantum dots in photonic crystal microcavity

被引：8

作者：

Iwamoto, S

Tatebayashi, J

Fukuda, T

Nakaoka, T

Ishida, S

Arakawa, Y

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, Nanoelect Collaborat Res Ctr, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期

关键词：

quantum dots; photonic crystal; microcavity; single photon emitter; telecommunication wavelengths; cavity quality factor;

D O I：

10.1143/JJAP.44.2579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed light emission at a wavelength of 1.55 mu m from InAs quantum dots (QDs) embedded in a high-quality-factor photonic crystal (PhC inicrocavity for the first time. The InAs QDs were grown on a (100) GaAs substrate and the photoluminescence measurement was performed at room temperature. The cavity quality factor Q reaches 2700, which is close to the resolution limit of our measurement system. Due to the small mode volume V of the PhC cavity, Q/V increases up to 3400 x (n/lambda)(3). These are the highest values ever reported for microcavities containing QDs emitting in a spectral range around 1.5 mu m. Details of the optical properties of the microcavity, such as polarization and pump power density dependences are also discussed.

引用

页码：2579 / 2583

页数：5

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