Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film

被引:22
|
作者
Baranwal, Ajay Kumar [1 ]
Saini, Shrikant [2 ]
Wang, Zhen [3 ]
Hamada, Kengo [3 ]
Hirotani, Daisuke [3 ]
Nishimura, Kohei [1 ]
Kamarudin, Muhammad Akmal [1 ]
Kapil, Gaurav [1 ,5 ]
Yabuki, Tomohide [2 ]
Iikubo, Satoshi [3 ]
Shen, Qing [4 ]
Miyazaki, Koji [2 ]
Hayase, Shuzi [1 ]
机构
[1] Univ Electrocommun, I Powered Energy Syst Res Ctr, Chofu, Tokyo, Japan
[2] Kyushu Inst Technol, Dept Mech Engn, Kitakyushu, Fukuoka, Japan
[3] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Kitakyushu, Fukuoka, Japan
[4] Univ Electrocommun, Grad Sch Informat & Engn, Chofu, Tokyo, Japan
[5] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo, Japan
关键词
Perovskite; CsSnI3; thermoelectric film; precursor solution aging; SOLAR-CELLS; THERMAL-CONDUCTIVITY; HALIDE PEROVSKITES; SEMICONDUCTOR; LENGTHS; GROWTH;
D O I
10.1007/s11664-019-07846-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 mu W m(-1) K-2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 mu V/K, measured at room temperature.
引用
收藏
页码:2698 / 2703
页数:6
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