Photoluminescence study of magnetic-field-induced excitonic transitions in AlxGa1-xAs/GaAs asymmetric double quantum wells

被引：9

作者：

Lee, Kyu-Seok ^{[1
]}

Noh, Sam Kyu

Chang, Soo Kyung

机构：

[1] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea

[2] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Quantum Dot Technol Lab, Taejon 305600, South Korea

[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.76.073305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed magnetic-field-induced charged excitonic transitions from one-side-modulation-doped AlxGa1-xAs/GaAs asymmetric double quantum wells (ADQWs) where two low-energy conduction subbands e1 and e2 are coupled strongly, whereas the heavy-hole ground state hh1 is localized mostly in a quantum well. In the presence of a magnetic field applied parallel to the growth axis, the photoluminescence spectrum of the e1-hh1 transition develops into a Landau fan for filling factors of nu>2. However, at nu < 2, the lowest Landau-level (LL) transition reveals the charged-exciton behavior with an abrupt changeover in the field dependence of the transition energy, whereas the intensities of other LL transitions in the same Landau fan diminish. When the density of free electrons in the ADQWs is about 1.4x10(11) cm(-2), a new charged excitonic e2-hh1 transition also appears in the sigma(+) polarization at nu < 2.

引用

页数：4

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