Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al2O3

被引:1
作者
Hullavarad, S. S. [1 ]
Hullavarad, N. V. [1 ]
Vispute, R. D. [2 ]
Venkatesan, T. [2 ]
Kilpatrick, S. J. [3 ]
Ervin, M. H. [3 ]
Nichols, B. [3 ]
Wickenden, A. E. [3 ]
机构
[1] Univ Alaska, Off Elect Miniaturizat, Fairbanks, AK 99701 USA
[2] Univ Maryland, Ctr Nanophys & Appl Mat, College Pk, MD 20742 USA
[3] USA, Res Lab, Adelphi, MD 20783 USA
关键词
Nanowires; ZnO; catalyst free; PL; CL; ZINC-OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; EPITAXIAL-GROWTH; DEPOSITION; NANOSTRUCTURES; LUMINESCENCE; NANOTUBES; MECHANISM; EMISSION;
D O I
10.1007/s11664-010-1251-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The evolution of ZnO nanowires has been studied under supersaturation of Zn metal species with and without a ZnO thin-film buffer layer on alpha-Al2O3 deposited by the pulsed laser ablation technique. The nanowires had diameters in the range of 30 nm to 50 nm and lengths in the range of 5 mu m to 10 mu m with clear hexagonal shape and [000 (1) over bar], [10 (1) over bar1], and [10 (1) over bar0] facets. X-ray diffraction (XRD) measurements indicated crystalline properties for the ZnO nanostructures grown on pulsed laser deposition (PLD) ZnO nucleation layers. The optical properties were analyzed by photoluminescence (PL) and cathodoluminescence (CL) measurements. The ZnO nanowires were found to emit strong ultraviolet (UV) light at 386 nm and weak green emission as observed by PL measurements. The stoichiometry of Zn and O was found to be close to 1 by x-ray photoelectron spectroscopy (XPS) measurements. The process-dependent growth properties of ZnO nanostructures can be harnessed for future development of nanoelectronic components including optically pumped lasers, optical modulators, detectors, electron emitters, and gas sensors.
引用
收藏
页码:1209 / 1217
页数:9
相关论文
共 61 条
[1]   Large-quantity free-standing ZnO nanowires [J].
Banerjee, D ;
Lao, JY ;
Wang, DZ ;
Huang, JY ;
Ren, ZF ;
Steeves, D ;
Kimball, B ;
Sennett, M .
APPLIED PHYSICS LETTERS, 2003, 83 (10) :2061-2063
[2]   Single-nanowire electrically driven lasers [J].
Duan, XF ;
Huang, Y ;
Agarwal, R ;
Lieber, CM .
NATURE, 2003, 421 (6920) :241-245
[3]   Self-oriented regular arrays of carbon nanotubes and their field emission properties [J].
Fan, SS ;
Chapline, MG ;
Franklin, NR ;
Tombler, TW ;
Cassell, AM ;
Dai, HJ .
SCIENCE, 1999, 283 (5401) :512-514
[4]   Electrical properties of ZnO nanowire-field effect transistors characterized with scanning probes [J].
Fan, ZY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[5]   Three-dimensional interconnected nanowire networks of ZnO [J].
Gao, PM ;
Lao, CS ;
Hughes, WL ;
Wang, ZL .
CHEMICAL PHYSICS LETTERS, 2005, 408 (1-3) :174-178
[6]   Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems:: Limiting effects on device potential -: art. no. 115439 [J].
Grabowska, J ;
Meaney, A ;
Nanda, KK ;
Mosnier, JP ;
Henry, MO ;
Duclère, JR ;
McGlynn, E .
PHYSICAL REVIEW B, 2005, 71 (11)
[7]  
GUPTA TA, 1985, J MATER SCI, V20, P3887
[8]   Catalyst-free surface-roughness-assisted growth of large-scale vertically aligned zinc oxide nanowires by thermal evaporation [J].
Ho, Shu-Te ;
Chen, Kuan-Chiao ;
Chen, Hsiang-An ;
Lin, Hsin-Yu ;
Cheng, Chun-Yuan ;
Lin, Heh-Nan .
CHEMISTRY OF MATERIALS, 2007, 19 (16) :4083-4086
[9]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[10]   Homo- and hetero-epitaxial growth of hexagonal and cubic MgxZn1-x O alloy thin films by pulsed laser deposition technique [J].
Hullavarad, S. S. ;
Hullavarad, N. V. ;
Pugel, D. E. ;
Dhar, S. ;
Takeuchi, I. ;
Venkatesan, T. ;
Vispute, R. D. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (16) :4887-4895