A 32dBm OOB-IIP3 BW-Extended 5G-NR Receiver with 4th-Order Gain-Boosted N-path LNA

被引：0
作者：
Liu, Zhixiang [1 ]
Wei, Shiyou [1 ]
Qi, Gengzhen [1 ]
Mak, Pui-In [2 ]
机构：
[1] Sun Yat Sen Univ, Sch Microelectron Sci & Technol, Zhuhai, Peoples R China
[2] Univ Macau, State Key Lab Analog & Mixed Signal VLSI IME, Macau, Peoples R China
来源：
2022 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, APCCAS | 2022年
基金：
中国国家自然科学基金;
关键词：
Blocker-tolerant; FDD; 5G-NR; N-path filter; linearity; OOB-IIP3; low-noise amplifier; LNA; LO generator; tunable filter; wireless communication; RF FRONT-END; BLOCKER-TOLERANT;
D O I：
10.1109/APCCAS55924.2022.10090370
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper reports a self-interference-resilient receiver (RX) for 5G-NR-FDD covering 0.5 to 2GHz. It incorporates a 4th-order gain-boosted N-path low-noise amplifier (LNA) and a 2nd-order baseband (BB) TIA to widen the -3dB RF-BW and also enhance the out-of-band (OOB) roll-off slope. Furthermore, a positive-feedback loop is created for the input-impedance matching purpose thanks to the impedance-translation property of the N- path network. Implemented in 65nm CMOS process, the simulation results show that with >54MHz RF-BW the RX achieves >24dB OOB rejection at 80MHz offset. When the offset frequency (Delta f) is twice the -3dB RF-BW, the RX achieves 32dBm OOB-IIP3, while consuming a reasonable power of 27 to 67mW. The noise figure (NF) ranges from 3.2 to 5.5dB and active area is 0.38mm(2).
引用
收藏
页码：463 / 467
页数：5
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