Effective charge carrier lifetime in CdHgTe variable-gap structures

被引：6
|
作者：
Osadchii, VM [1 ]
Suslyakov, AO [1 ]
Vasil'ev, VV [1 ]
Dvoretsky, SA [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 03期
关键词：
D O I：
10.1134/1.1187682
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effective charge carrier lifetime in n-type CdHgTe variable-gap structures is calculated with allowance for Auger recombination and recombination at dislocations. It is shown that introducing wide, variable-gap layers can eliminate the effect of surface recombination and yield long effective lifetimes, even for high densities of dislocations (above 10(7) cm(-2)). The calculated charge carrier lifetimes are in agreement with measurements on variable-gap structures grown by molecular-beam epitaxy. (C) 1999 American Institute of Physics. [S1063-7826(99)00803-0].
引用
收藏
页码：297 / 300
页数：4
相关论文
共 50 条
  • [31] THERMIONIC CURRENTS IN VARIABLE-GAP STRUCTURES WITH LINEAR-GRADIENT AND ABRUPT HETEROJUNCTIONS
    OSIPOV, VV
    KHOLODNOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 147 - 152
  • [32] PHOTO-ELECTRIC EFFECT IN VARIABLE-GAP SURFACE-BARRIER STRUCTURES
    BERKELIEV, A
    GOLDBERG, YA
    IMENKOV, AN
    MELEBAEV, D
    TSARENKOV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 54 - 57
  • [33] PHOTOELECTRIC PROPERTIES OF VARIABLE-GAP AU-GA1-XAIXAS STRUCTURES
    BYVALYI, VA
    VOLKOV, AS
    GOLDBERG, YA
    DMITRIEV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 579 - 581
  • [34] PHOTON TRANSPORT OF CARRIERS IN VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURES.
    Gabaraev, R.S.
    Kravchenko, A.F.
    1600, (18):
  • [35] A variable-gap model for helium bubbles in nickel
    Fokt, M.
    Adjanor, G.
    Jourdan, T.
    COMPUTATIONAL MATERIALS SCIENCE, 2022, 202
  • [36] ESTIMATE OF THE VARIABLE-GAP PHOTO-EMF
    TOKALIN, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1211 - 1211
  • [37] VARIABLE-GAP GA1-XALXSB P-N STRUCTURES AND THEIR PROPERTIES
    IMENKOV, AN
    LIDEIKIS, TP
    TSARENKOV, BV
    SHERNYAKOV, YM
    YAKOVLEV, YP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 748 - 751
  • [38] Photovoltaic effect in thin variable-gap layers
    Sokolovskii, BS
    SEMICONDUCTORS, 1996, 30 (06) : 535 - 537
  • [39] PHOTO-LUMINESCENCE OF A VARIABLE-GAP SEMICONDUCTOR
    VOLKOV, AS
    TSARENKOV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1004 - 1008
  • [40] PHOTON TRANSPORT OF CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR
    VOLKOV, AS
    LIPKO, AL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 262 - 266
12345