Effective charge carrier lifetime in CdHgTe variable-gap structures

被引：6
|
作者：
Osadchii, VM [1 ]
Suslyakov, AO [1 ]
Vasil'ev, VV [1 ]
Dvoretsky, SA [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 03期
关键词：
D O I：
10.1134/1.1187682
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effective charge carrier lifetime in n-type CdHgTe variable-gap structures is calculated with allowance for Auger recombination and recombination at dislocations. It is shown that introducing wide, variable-gap layers can eliminate the effect of surface recombination and yield long effective lifetimes, even for high densities of dislocations (above 10(7) cm(-2)). The calculated charge carrier lifetimes are in agreement with measurements on variable-gap structures grown by molecular-beam epitaxy. (C) 1999 American Institute of Physics. [S1063-7826(99)00803-0].
引用
收藏
页码：297 / 300
页数：4
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