Vertical Graphene Base Transistor

被引：126

作者：

Mehr, Wolfgang ^{[1
]}

Dabrowski, Jarek ^{[1
]}

Scheytt, J. Christoph ^{[1
]}

Lippert, Gunther ^{[1
]}

Xie, Ya-Hong ^{[2
]}

Lemme, Max C. ^{[3
]}

Ostling, Mikael ^{[3
]}

Lupina, Grzegorz ^{[1
]}

机构：

[1] IHP GmbH, D-15236 Frankfurt, Oder, Germany

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[3] KTH Royal Inst Technol, S-10044 Stockholm, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期

基金：

欧洲研究理事会;

关键词：

Graphene; hot-electron transistor (HET); radio frequency (RF); SPECTROSCOPY; GRAPHITE; DEVICES;

D O I：

10.1109/LED.2012.2189193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.

引用

收藏

页码：691 / 693

页数：3

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