Nondestructive analysis of crystal defects in 4H-SiC epilayer by devised electron-beam-induced current method

被引：6

作者：

Nitani, S ^{[1
]}

Hatayama, T ^{[1
]}

Yamaguchi, K ^{[1
]}

Yano, H ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 37-41期

关键词：

SiC; EBIC; defect; dislocation; Schottky;

D O I：

10.1143/JJAP.44.L1271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A planar mapping electron-beam-induced current (EBIC) method was applied to analyze the crystal defects in 4H-SiC epilayers for the first time. The crystal defects such as dislocations and subgrain boundaries could be clearly observed using 0.02-mu m-thick nickel Schottky contacts formed on the whole 4H-SiC surface. A basal plane dislocation was peculiarly displayed as a streamlike shape in the EBIC image. The relation between the resolution of images and the accelerating voltage in the devised EBIC method is discussed.

引用

页码：L1271 / L1274

页数：4

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