Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

被引：0
作者：
Chun, MD [1 ]
Kim, DW [1 ]
Choo, J [1 ]
Huh, JY [1 ]
机构：
[1] Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea
来源：
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年
关键词：
D O I：
10.1109/PVSC.2000.915825
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1x10(13) cm(-2) to 2x10(15) cm(-2). A p-n junction formed in the Cz wafers when the dose reached a value between 1.0x10(13) cm(-2) and 3x10(13) cm(-2) while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
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页码：315 / 318
页数：4
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