The hysteresis characteristics of low temperature (≤200 °C) silicon nanocrystals embedded in silicon-rich silicon nitride films

被引：2
|
作者：
Lee, Kyoung-Min [1 ]
Hwang, Jae-Dam [2 ]
Keum, Ki-Su [2 ]
No, Kil-Sun [2 ]
Hong, Wan-Shick [1 ,2 ]
机构：
[1] Univ Seoul, Dept Nano Engn, Seoul 130743, South Korea
[2] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea
来源：
NANOCRYSTAL EMBEDDED DIELECTRICS FOR ELECTRONIC AND PHOTONIC DEVICE S | 2011年 / 35卷 / 18期
关键词：
MEMORY DEVICES; SI;
D O I：
10.1149/1.3647903
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The electrical properties of silicon nanocrystals (Si NCs) embedded in silicon-rich silicon nitride (SRSN) films were investigated by fabricating metal-insulator-semiconductor capacitor structures to utilize the Si NCs as charge storage nodes. The Si NCs embedded in SRSN films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 degrees C. The counterclockwise hysteresis loops were observed in capacitance-voltage (C-V) characteristics. A memory window of 13 V was observed in the sweep voltage range of +/- 12 V.
引用
收藏
页码：47 / 52
页数：6
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