Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer

被引：48

作者：

Chubarov, Mikhail ^{[1
]}

Pedersen, Henrik ^{[1
]}

Hogberg, Hans ^{[1
]}

Darakchieva, Vanya ^{[1
]}

Jensen, Jens ^{[1
]}

Persson, Per O. A. ^{[1
]}

Henry, Anne ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 10-11期

基金：

瑞典研究理事会;

关键词：

chemical vapor deposition; BN; epitaxy; X-ray diffraction; CHEMICAL-VAPOR-DEPOSITION; SAPPHIRE; SUBSTRATE; SURFACE; MOVPE;

D O I：

10.1002/pssr.201105410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of sp(2)-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg-Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp(2)-hybridized BN is observed at 1366 cm(-1) from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：397 / 399

页数：3

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