Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer

被引：47

作者：

Chubarov, Mikhail ^{[1
]}

Pedersen, Henrik ^{[1
]}

Hogberg, Hans ^{[1
]}

Darakchieva, Vanya ^{[1
]}

Jensen, Jens ^{[1
]}

Persson, Per O. A. ^{[1
]}

Henry, Anne ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 10-11期

基金：

瑞典研究理事会;

关键词：

chemical vapor deposition; BN; epitaxy; X-ray diffraction; CHEMICAL-VAPOR-DEPOSITION; SAPPHIRE; SUBSTRATE; SURFACE; MOVPE;

D O I：

10.1002/pssr.201105410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of sp(2)-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg-Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp(2)-hybridized BN is observed at 1366 cm(-1) from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：397 / 399

页数：3

共 14 条

[1] In situ gravimetric monitoring of surface reactions between sapphire and NH3
Akiyama, Kazuhiro
Ishii, Yasuhiro
Murakami, Hisashi
Kumagai, Yoshinao
Koukitu, Akinori
[J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 3110 - 3113
[2] Synthesis of highly crystalline rhombohedral BN triangular nanoplates via a convenient solid state reaction
Bao, Keyan
Yu, Fengyang
Shi, Liang
Liu, Shuzhen
Hu, Xiaobo
Cao, Jie
Qian, Yitai
[J]. JOURNAL OF SOLID STATE CHEMISTRY, 2009, 182 (04) : 925 - 931
[3] Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
Dahal, R.
Li, J.
Majety, S.
Pantha, B. N.
Cao, X. K.
Lin, J. Y.
Jiang, H. X.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (21)
[4] Single crystalline aluminum nitride films fabricated by nitriding α-Al2O3
Fukuyama, Hiroyuki
Kusunoki, Shin-ya
Hakomori, Akira
Hiraga, Kenji
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
[5] Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy
Kobayashi, Y.
Nakamura, T.
Akasaka, T.
Makimoto, T.
Matsumoto, N.
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 325 - 327
[6] Hexagonal boron nitride grown by MOVPE
Kobayashi, Y.
Akasaka, T.
Makimoto, T.
[J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 5048 - 5052
[7] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE
Kobayashi, Y.
Akasaka, T.
[J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 5044 - 5047
[8] LOW-FREQUENCY RAMAN-ACTIVE VIBRATION OF HEXAGONAL BORON-NITRIDE
KUZUBA, T
ERA, K
ISHII, T
SATO, T
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (11) : 863 - 865
[9] Twin structures of rhombohedral and cubic boron nitride prepared by chemical vapor deposition method
Oku, T
Hiraga, K
Matsuda, T
Hirai, T
Hirabayashi, M
[J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 1138 - 1145
[10] HOT FILAMENT ACTIVATED CHEMICAL VAPOR-DEPOSITION OF BORON-NITRIDE
RYE, RR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 1099 - 1103

← 1 2 →