Dislocation behavior in silicon crystal induced by laser shock peening: A multiscale simulation approach

被引：31
作者：
Cheng, GJ [1 ]
Shehadeh, MA [1 ]
机构：
[1] Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99163 USA
来源：
SCRIPTA MATERIALIA | 2005年 / 53卷 / 09期
关键词：
laser shock peening; silicon; dislocation dynamics simulation; hydrodynamics simulation; brittle materials;
D O I：
10.1016/j.scriptamat.2005.07.014
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents a modified laser shock peening (LSP) technique to generate plastic deformation in silicon crystal. The induced dislocation activity in silicon crystal is studied by integrated shock dynamics and multiscale dislocation dynamics plasticity simulations. This LSP process can also be applied to other brittle materials to generate plastic deformation. (c) 2005 Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
引用
收藏
页码：1013 / 1018
页数：6
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