Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

被引:2
作者
Maslyanchuk, Olena L. [1 ]
Solovan, Mykhailo M. [1 ]
Maistruk, Eduard V. [1 ]
Brus, Viktor V. [1 ,2 ]
Maryanchuk, Pavlo D. [1 ]
Gnatyuk, Volodymyr A. [3 ,4 ]
Aoki, Toru [4 ]
机构
[1] Yury Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silicon Photovolta, D-12489 Berlin, Germany
[3] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, Prospekt Nauky 41, UA-03028 Kiev, Ukraine
[4] Shizuoka Univ, Res Inst Elect, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
来源
THIRTEENTH INTERNATIONAL CONFERENCE ON CORRELATION OPTICS | 2017年 / 10612卷
关键词
CdTe diodes; charge transport mechanisms; energy spectrum; minority carrier injection; X- and gamma-ray detectors; generation-recombination in the space charge region; space charge limited current; SINGLE-CRYSTAL; CDTE;
D O I
10.1117/12.2305085
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The present paper analyzes the harge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of Cs-137 and Am-241 isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/gamma-ray detectors in the spectrometric mode.
引用
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页数:6
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