Microstructure characterization of microcrystalline silicon thin films deposited by very high frequency plasma-enhanced chemical vapor deposition by spectroscopic ellipsometry

被引：9

作者：

Zhang, He ^{[1
]}

Zhang, Xiaodan ^{[1
]}

Wei, Changchun ^{[1
]}

Sun, Jian ^{[1
]}

Geng, Xinhua ^{[1
]}

Xiong, Shaozhen ^{[1
]}

Zhao, Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin 300071, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 02期

关键词：

Microcrystalline silicon; High pressure; Spectroscopic ellipsometry; Incubation layer; SOLAR-CELLS; HYDROGEN DILUTION; OPTICAL FUNCTIONS; GLOW-DISCHARGE; EVOLUTION; GROWTH;

D O I：

10.1016/j.tsf.2011.04.166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We applied ex situ spectroscopic ellipsometry (SE) on silicon thin films across the a-Si:H/mu c-Si:H transition deposited using different hydrogen dilutions at a high pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The optical models were based on effective medium approximation (EMA) and effective to estimate the thickness of the amorphous incubation layer and the volume fractions of amorphous, microcrystalline phase and void in mu c-Si:H thin films. We obtained an acceptable data fit and the SE results were consistent with that from Raman spectroscopy and atomic force microscopy (AFM). We found a thick incubation layer in mu c-Si:H thin films deposited at a high rate of similar to 5 angstrom/s and this microstructure strongly affected their conductivity. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：861 / 865

页数：5

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