Microstructure characterization of microcrystalline silicon thin films deposited by very high frequency plasma-enhanced chemical vapor deposition by spectroscopic ellipsometry

被引：9

作者：

Zhang, He ^{[1
]}

Zhang, Xiaodan ^{[1
]}

Wei, Changchun ^{[1
]}

Sun, Jian ^{[1
]}

Geng, Xinhua ^{[1
]}

Xiong, Shaozhen ^{[1
]}

Zhao, Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin 300071, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 02期

关键词：

Microcrystalline silicon; High pressure; Spectroscopic ellipsometry; Incubation layer; SOLAR-CELLS; HYDROGEN DILUTION; OPTICAL FUNCTIONS; GLOW-DISCHARGE; EVOLUTION; GROWTH;

D O I：

10.1016/j.tsf.2011.04.166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We applied ex situ spectroscopic ellipsometry (SE) on silicon thin films across the a-Si:H/mu c-Si:H transition deposited using different hydrogen dilutions at a high pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The optical models were based on effective medium approximation (EMA) and effective to estimate the thickness of the amorphous incubation layer and the volume fractions of amorphous, microcrystalline phase and void in mu c-Si:H thin films. We obtained an acceptable data fit and the SE results were consistent with that from Raman spectroscopy and atomic force microscopy (AFM). We found a thick incubation layer in mu c-Si:H thin films deposited at a high rate of similar to 5 angstrom/s and this microstructure strongly affected their conductivity. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：861 / 865

页数：5

共 25 条

[1] Evolution of microstructure and phase in amorphous, protocrystalline, and micro crystalline silicon studied by real time spectroscopic ellipsometry [J].

Collins, RW ;

Ferlauto, AS ;

Ferreira, GM ;

Chen, C ;

Koh, J ;

Koval, RJ ;

Lee, Y ;

Pearce, JM ;

Wronski, CR .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :143-180

[2] IMPROVEMENT OF GRAIN-SIZE AND DEPOSITION RATE OF MICROCRYSTALLINE SILICON BY USE OF VERY HIGH-FREQUENCY GLOW-DISCHARGE [J].

FINGER, F ;

HAPKE, P ;

LUYSBERG, M ;

CARIUS, R ;

WAGNER, H ;

SCHEIB, M .

APPLIED PHYSICS LETTERS, 1994, 65 (20) :2588-2590

[3] Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry [J].

Fujiwara, H ;

Kondo, M ;

Matsuda, A .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4181-4190

[4] Real-time spectroscopic ellipsometry studies of the nucleation and grain growth processes in microcrystalline silicon thin films [J].

Fujiwara, H ;

Kondo, M ;

Matsuda, A .

PHYSICAL REVIEW B, 2001, 63 (11)

[5]

Fujiwara Hiroyuki., 2007, SPECTROSCOPIC ELLIPS, P82

[6] High quality amorphous silicon materials and cells grown with hydrogen dilution [J].

Guha, S ;

Yang, J ;

Banerjee, A ;

Yan, BJ ;

Lord, K .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :329-347

[7] Progress in amorphous and nanocrystalline silicon solar cells [J].

Guha, Subhendu ;

Yang, Jeffrey .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1917-1921

[8] High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition [J].

Guo, LH ;

Kondo, M ;

Fukawa, M ;

Saitoh, K ;

Matsuda, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A) :L1116-L1118

[9] Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation [J].

Herzinger, CM ;

Johs, B ;

McGahan, WA ;

Woollam, JA ;

Paulson, W .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3323-3336

[10] Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth [J].

Houben, L ;

Luysberg, M ;

Hapke, P ;

Carius, R ;

Finger, F ;

Wagner, H .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (06) :1447-1460

← 1 2 3 →