Remote charge scattering in MOSFETs with ultra-thin gate dielectrics

被引：35
|
作者：
Krishnan, MS [1 ]
Yeo, YC [1 ]
Lu, Q [1 ]
King, TJ [1 ]
Bokor, J [1 ]
Hu, CM [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年
关键词：
D O I：
10.1109/IEDM.1998.746423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20 - 30 % reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 Angstrom.
引用
收藏
页码：571 / 574
页数：4
相关论文
共 50 条
  • [1] Assessment of charge-induced damage to ultra-thin gate MOSFETs
    Krishnan, S
    Rangan, S
    Hattangady, S
    Xing, G
    Brennan, K
    Rodder, M
    Ashok, S
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 445 - 448
  • [2] An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
    Rodriguez, N.
    Roldan, J. B.
    Gamiz, F.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (04) : 348 - 353
  • [3] Antenna protection strategy for ultra-thin gate MOSFETs
    Krishnan, S
    Amerasekera, A
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 302 - 306
  • [4] RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS
    HAN, LK
    BHAT, M
    WRISTERS, D
    WANG, HH
    KWONG, DL
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 89 - 96
  • [5] The impact of gate-image charge on RTS amplitudes in ultra-thin gate oxide n-MOSFETs
    Zhang, Peng
    Zhuang, Yi Qi
    Ma, Zhong Fa
    Bao, Li
    Du, Lei
    Bao, Jun Lin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)
  • [6] Study on Mechanism of Thermal Curing in Ultra-thin Gate Dielectrics
    Mitani, Yuichiro
    Higashi, Yusuke
    Nakasaki, Yasushi
    2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
  • [7] Study on ultra-thin gate dielectrics: Surface preparation and reliability
    Jia, L
    Chai, SM
    Xu, QX
    Qian, H
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 120 - 122
  • [8] Ultra-thin gate dielectrics: They break down, but do they fail?
    Weir, BE
    Silverman, PJ
    Monroe, D
    Krisch, KS
    Alam, MA
    Alers, GB
    Sorsch, TW
    Timp, GL
    Baumann, F
    Liu, CT
    Ma, Y
    Hwang, D
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 73 - 76
  • [9] Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
    Buchanan, DA
    Lo, SH
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 13 - 20
  • [10] Simulation of tunneling gate current in ultra-thin SOI MOSFETs
    Fiegna, C
    Abramo, A
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 110 - 113
12345