Remote charge scattering in MOSFETs with ultra-thin gate dielectrics

被引：35

作者：

Krishnan, MS ^{[1
]}

Yeo, YC ^{[1
]}

Lu, Q ^{[1
]}

King, TJ ^{[1
]}

Bokor, J ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20 - 30 % reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 Angstrom.

引用

页码：571 / 574

页数：4

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