Fabrication of phase-change Ge2Sb2Te5 nano-rings

被引：23

作者：

Chu, Cheng Hung ^{[1
,2
]}

Tseng, Ming Lun ^{[1
]}

Da Shiue, Chiun ^{[1
]}

Chen, Shuan Wei ^{[1
]}

Chiang, Hai-Pang ^{[2
]}

Mansuripur, Masud ^{[3
]}

Tsai, Din Ping ^{[1
,4
,5
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung 202, Taiwan

[3] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

[5] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 13期

关键词：

CHANGE RECORDING LAYER; OPTICAL DISK; DATA-STORAGE; THIN-FILMS; MEMORY; MARKS; CRYSTALLIZATION; LITHOGRAPHY; TRANSITIONS;

D O I：

10.1364/OE.19.012652

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Phase-change material Ge2Sb2T5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate. (C)2011 Optical Society of America

引用

页码：12652 / 12657

页数：6

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