Correlated Random Bit Generation Using Chaotic Semiconductor Lasers Under Unidirectional Optical Injection

被引:21
作者
Li, Xiao-Zhou [1 ]
Li, Song-Sui [1 ]
Chan, Sze-Chun [1 ,2 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, State Key Lab Millimeter Waves, Hong Kong, Hong Kong, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2017年 / 9卷 / 05期
关键词
Semiconductor lasers; injection-locked lasers; random bit generation; chaos; SIGNAL INDUCED SYNCHRONIZATION; BANDWIDTH-ENHANCED CHAOS; TIME-DELAY-SIGNATURE; KEY DISTRIBUTION; FEEDBACK; ENCRYPTION; DYNAMICS; SYSTEM; LIGHT;
D O I
10.1109/JPHOT.2017.2748978
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Correlated random bit generation is investigated using three optically injected chaotic semiconductor lasers. Based on a rate-equation model, a continuous-wave injection first perturbs a common laser into chaos. The common laser then optically injects a pair of response lasers through a public channel unidirectionally. The two response lasers of identical parameters are synchronized. Their chaotic emissions are digitized in yielding correlated random bit streams. As the scheme advantageously involves no feedback loops, the output bits contain no undesirable time-delay information artifacts. Security is ensured as the response lasers produce bits that cannot be extracted using the information in the public channel alone. Output bit streams are generated at a tunable rate of up to about 2 Gbps with randomness verified by a test suite of the National Institute of Standards and Technology. The streams are correlated with a low bit error ratio of less than 4%, which is sensitive to parameter mismatch between the response lasers.
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页数:11
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