Physical aspects of high-power semiconductor lasers

被引：0
|
作者：
Gonda, S
Miyajima, H
Kan, H
机构：
[1] Fukui Univ Technol, Fukui 9108505, Japan
[2] Hamamatsu Photon KK, Hamakita 4348601, Japan
来源：
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Several issues in developing high-power semiconductor lasers are reviewed. Concerning facet problems resulting in catastrophic optical damage, the relation between facet strength and materials are discussed. As for the removal of generated heat, a new jet-type water cooling method "Funryu" is introduced. Monolithic 1-cm laser array emitting 255-W output in CW at 808 nm is demonstrated.
引用
收藏
页码：89 / 94
页数：6
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