In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

被引：51

作者：

Wardenga, Hans F. ^{[1
]}

Frischbier, Mareike V. ^{[1
]}

Morales-Masis, Monica ^{[2
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Div Surface Sci, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

[2] EPFL, Photovolta & Thin Film Elect Lab, Inst Microengn, CH-2002 Neuchatel 2, Switzerland

来源：

MATERIALS | 2015年 / 8卷 / 02期

关键词：

HYDROGEN-DOPED IN2O3; TRANSPARENT CONDUCTIVE OXIDE; HETEROJUNCTION SOLAR-CELLS; ELECTRICAL-PROPERTIES; CARRIER TRANSPORT; ITO FILMS;

D O I：

10.3390/ma8020561

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm(2)/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

引用

页码：561 / 574

页数：14

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