The photoluminescence studies of high purity InP

被引：0

作者：

Surma, B ^{[1
]}

Wnuk, A ^{[1
]}

Dubecky, F ^{[1
]}

Piersa, M ^{[1
]}

Hruban, A ^{[1
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS | 2002年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

PL studies of high purity undoped and low Fe-doped InP, are presented in this work. It has been shown that for such materials the PL in the spectral range 0.9 eV - 1.45 eV is dominated by the emission from donor- and acceptor-like defects. For the first time was presented the discrete lines for donor-acceptor transitions in InP. The evaluated ionisation energies for donor- and acceptor-like defects were similar to 0.120 eV and similar to 0.060 eV respectively.

引用

页码：177 / 180

页数：4

共 7 条

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