Growth and doping of bulk GaN by hydride vapor phase epitaxy

被引：15

作者：

Zhang, Yu-Min ^{[1
,2
]}

Wang, Jian-Feng ^{[1
,2
]}

Cai, De-Min ^{[2
]}

Ren, Guo-Qiang ^{[1
]}

Xu, Yu ^{[1
,2
]}

Wang, Ming-Yue ^{[1
,2
]}

Hu, Xiao-Jian ^{[1
,2
]}

Xu, Ke ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[2] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China

来源：

CHINESE PHYSICS B | 2020年 / 29卷 / 02期

基金：

中国国家自然科学基金;

关键词：

GaN; hydride vapor phase epitaxy (HVPE); doping; FREESTANDING GAN; YELLOW LUMINESCENCE; IMPURITY INCORPORATION; GALLIUM NITRIDE; THREADING DISLOCATIONS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; SI; PHOTOLUMINESCENCE;

D O I：

10.1088/1674-1056/ab65b9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

引用

页数：14

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