Exciton Luminescence Dynamics in ZnO Crystal Observed under One- and Two-Photon Excitation

被引：3
作者：
Yamamoto, Sekika [1 ]
Sakuma, Hikari [1 ]
Mishina, Tomobumi [1 ]
机构：
[1] Hokkaido Univ, Dept Phys, Grad Sch Sci, Sapporo, Hokkaido 0600810, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 12期
关键词：
HYDROTHERMAL METHOD; SINGLE-CRYSTAL; BULK ZNO; PHOTOLUMINESCENCE; GROWTH; SPECTROSCOPY; ABSORPTION; LIFETIME; GAAS;
D O I：
10.1143/JJAP.49.121102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Free-exciton luminescence dynamics at the surface and deep inside of a ZnO single crystal are investigated by one- and two-photon excitation mothods. The free-exciton lifetime is carefully evaluated at each position by considering the excitonic diffusion effect and the trapping process inside the sample. The obtained temperature dependence of the lifetime indicates that the photon recycling effect dominates the exciton lifetime inside the sample while the K-selection rule determines the lifetime at the surface. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.121102
引用
收藏
页数：4
相关论文
共 22 条
  • [11] Growth of 2 inch ZnO bulk single crystal by the hydrothermal method
    Maeda, K
    Sato, M
    Niikura, I
    Fukuda, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) : S49 - S54
  • [12] Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
    Muth, JF
    Kolbas, RM
    Sharma, AK
    Oktyabrsky, S
    Narayan, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7884 - 7887
  • [13] Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks
    Oh, D. C.
    Kato, T.
    Goto, H.
    Park, S. H.
    Hanada, T.
    Yao, T.
    Kim, J. J.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (24)
  • [14] Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method
    Ohshima, E
    Ogino, H
    Niikura, I
    Maeda, K
    Sato, M
    Ito, M
    Fukuda, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 260 (1-2) : 166 - 170
  • [15] A comprehensive review of ZnO materials and devices -: art. no. 041301
    Ozgür, U
    Alivov, YI
    Liu, C
    Teke, A
    Reshchikov, MA
    Dogan, S
    Avrutin, V
    Cho, SJ
    Morkoç, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) : 1 - 103
  • [16] RENAUD R, 1992, J APPL PHYS, V71, P1907
  • [17] Nature of room-temperature photoluminescence in ZnO
    Shan, W
    Walukiewicz, W
    Ager, JW
    Yu, KM
    Yuan, HB
    Xin, HP
    Cantwell, G
    Song, JJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
  • [18] Photoluminescence measurements from the two polar faces of ZnO
    Sherriff, RE
    Reynolds, DC
    Look, DC
    Jogai, B
    Hoelscher, JE
    Collins, TC
    Cantwell, G
    Harsch, WC
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) : 3454 - 3457
  • [19] INTRINSIC LINEWIDTHS AND RADIATIVE LIFETIMES OF FREE-EXCITONS IN GAAS QUANTUM-WELLS
    SRINIVAS, V
    HRYNIEWICZ, J
    CHEN, YJ
    WOOD, CEC
    [J]. PHYSICAL REVIEW B, 1992, 46 (16): : 10193 - 10196
  • [20] THOOFT GW, 1987, PHYS REV B, V35, P8281, DOI 10.1103/PhysRevB.35.8281
123